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Fabrication and Characterization Techniques of Memory Devices - Thesis Example

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The author of the "Fabrication and Characterization Techniques of Memory Devices" paper states that in terms of characteristics of tee vice memory factors such as memory cell, cycle endurance, and memory speed and retention time have to be considered. …
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The semiconductor memory is comprised of volatile and non-volatile memory. Semiconductor memory is mainly organized into a memory cell that stores 1 bit each. Currently, there are emerging memory devices that are more effective in the storage of data. The emerging memory devices are a result of technological advancement and the emergence of new technologies. The devices can be traced back to the 1940s where the first programmable digital computers used thousands of octal base radio vacuum tubes.

Acoustic delay line memory was later developed by Presper Eckert and it was a construction of a glass tube filled with mercury and plugged with quartz crystal at each end (Roy, Padmanabhan, Goswami, Sai, Ramalingam, Raghavan & Ghosh, 2013). This type of memory could only store bits of information in the form of sound waves. However, it could only be limited to a capacity of hundreds of thousands of bits to remain efficient. In 1946, two alternatives to the delay line memory were developed and it was referred to as William tube and Selectron tube.

The two alternatives utilized electron beams in glass for storage purposes. The first random-access computer memory was later invented by Fred Williams and it had a larger memory capacity (Mafrica, et al. 2015). It had the capacity of storing thousands of bits as compared to the selectron tube which could only store 256 bits. This type of memory, however, had weaknesses as it was too sensitive to environmental disturbances. Magnetic core memory was developed in the late 1940s by Ann Wang, Jan Rajchman, and Jay Forrester.

This type of memory was effective as it could recall memory even after a power loss. This type of memory was used until the late 1960s when transistor-based memory was developed. The technological advancements led to the development of very large memory computers which led to the development of Random Access Memory (RAM) (Natsui, et al, 2013). IBM is one of the companies that utilized modern technology to develop memory devices that were more effective. The emerging memory devices contributed to the efficiency of the computer system. 

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The speed of the computers has also increased as a result of the emerging memory devices. Currently the technological advancement has led to the development of volatile and non-volatile memory. The volatile memory is computer memory which requires power in order to store the information. The non-volatile memory does not require power to store information (Chang, Liu & Chen, 2013). Currently, there are about 13 non-volatile emerging memories under research. Some already have working prototypes while others are at an early stage of research.

A lot of research is being carried out on non volatile memory as a result of its effectiveness. Different organizations are engaged in research in order to meet the changing technological environment and demands. As a result of different types of emerging memory devices, comparisons have to be made in order to select the most suitable form of memory. Various factors have to be considered during the comparison and this includes maturity, read latency, write latency, endurance and energy (Shang, Fei & Yu, 2012).

In terms of characteristics of tee vice memory factors such as memory cell, cycle endurance, and memory speed and retention time have to be considered. The paper thus discusses the characterization and fabrication of emerging memory device. 2.1. Electronic memories definition The electronic memory device is defined as a hardware device that is used for the storage of information that is required immediately for use by a computer. The electronic memory devices can be considered as folders in a file or mailboxes where information can be stored and accessed in a computer.

The memory devices such as magnetic tapes have one dimensional type of data. The process of storing data in a memory device is referred to as writing while the process of retrieving the data is referred to as reading (Celano, et al. 2014). Volatile memory is defined as a memory that works only with the availability of power. Nonvolatile memory such as magnetized disk contributes to operate even in the absence of a power supply. The volatile memory in most cases is the Random Access Memory (RAM) while the nonvolatile memory is commonly referred to as Read Only Memory.

The storage capacity of the memory device is defined i8n terms of bytes. 2.2. Types of memory 2.2.1. Non-volatile memories (ROM-Hybrid) Nonvolatile memory is a general term that is used to describe all forms of solid states memory that do not require their memory contents to be periodically refreshed. This includes the Read Only Memory Hybrid. The nonvolatile memory can retrieve the stored information even after power is turn off and back on (Ji, et al, 2012). In most cases, the nonvolatile memory is used for secondary storage or long term persistent storage.

The nonvolatile memories are mainly factory programmable and are mainly used for large volume products that do not require updates after it has been manufactured. A special programmer may however be able to alter the memory while it is outside the target system. While using the ROM-Hybrid, the data is usually stored by physically altering the storage site in the device. The non-volatile memory is mainly used for secondary storage of data. It can also be used for long term persistent storage.

A lot of research is currently in place to develop high speed nonvolatile memory. As a result of technological advancements different types of nonvolatile memories have been developed. This includes WORM, EEPROM, EPROM, FeRAM and flash. Each type of nonvolatile memory has its advantages as well as disadvantages. However flash is one of the common nonvolatile memory that dominates the market (Mehonic, et al, 2013). Latency, cost as well as the capacity are important factors that have to be considered during the selection of nonvolatile memories.

Scalability as well as the issues of power consumption is also important considerations when selecting the nonvolatile memory. 2.2.1.1. WORM Write once read many (WORM) is a data storage device in which information cannot be modified once it has been written.

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