HIGH DENSITY PLASMA CVD I start this article with the introduction to the Chemical vapor deposition (CVD). CVD is a chemical phenomenon of a material to deposit it on another material. This is done using thin films of the different materials. A typical CVD phenomenon includes the exposure of a material commonly in volatile format with the substrate which allows the reaction of those and obtains the desired result, deposit or exposure…
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These include silicon, carbon, nitrites, carbides, oxides and also many others. In semi-conductor world, CVT is majorly used in the fabrication process of the semiconductor devices and to the exposure of the amorphous SiO2, Silicon Germanium and tungsten etc. The CVD is also the cause of the production of synthetic diamonds. The major importance of CVD in the industry lies in the fact that this process uses the gases as reactants. So the gas’s properties give much support to the reaction procedures. CVD is far most the best and reliable deposition phenomenon/process present. Its advantages include Versatile in nature – any element can be deposited either metallic or non-metallic About 99.99-99.999% pure results Formation of the material less than the melting point Nearly 100% density Economical There exist various types of Chemical Vapor Deposition. These include Atmospheric pressure CVD (APCVD), Aerosol Assisted CVD (AACVD), Hot Wire (HWCVD), Atomic Layer CVD (ALCVD), Low Pressure CVD (LPCVD), Metal Organic CVD (MOCVD), Plasma Enhanced CVD (PECVD) Rapid Thermal CVD (RTCVD), Remote Plasma Enhanced CVD (RPECVD), Microwave Plasma Assisted CVD (MPACVD) and Ultra High Vacuum CVD (UHVCVD). Introduction to High Density Plasma CVD Now I will start a proper introduction of the High Density Plasma Chemical vapor deposition HDP-CVD). The HDP-CVD process is majorly used for the dielectric gap filling in semiconductor devices manufacturing at very micro level. It is used for the Shallow Trench Isolation (STI) and the dielectrics inter layers in 180-nm, 130-nm and 90-nm technologies. Hope fully it will start for the 65-nm and 45-nm technologies too. Gap fillings at such a small scale are very difficult task. While doing the edge gap filling some factors are also keep in consideration like raising the wafer temperature, plasma density and lowering of the deposition pressure. The reaction chamber is used for the process. Scientists have developed the new generation tools for the higher plasma density. The HDP reaction chamber is included the two sources of the radio frequency (RF). These are coupled with the plasma as inductively and capacitively. Inductive RF controls the plasma density and capacitive RF controls the physical bombardment of ions to the wafers or substrates. The reaction chamber will be discussed in detail later on. HDP-CVD gives improved characteristics for the gap filling in the semiconductor fabrication. A process is explained here as an example. A semiconductor material or substrate is loaded in the reaction process chamber. The high density plasma is generated by the gases including oxygen, silicon, hydrogen and a chemical etching gas which is nitrogen free. This plasma is generated exactly on the substrate semiconductor. After this process the chemical semiconductor substrate is heated to a very high temperature. Normally it ranges from the 550 degree Celsius to 700 degree Celsius. This procedure helps in filling the gap regions without any side effects to the substrate. The layer for filling the gaps is of the silicon oxide. Fabrication Process The process of the high density plasma CVD comprised of the different claims which are as follows The steps which involved in the high density
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“High Density Plasma CVD Research Paper Example | Topics and Well Written Essays - 2500 Words”, n.d. https://studentshare.org/engineering-and-construction/1393630-high-density-plasma-cvd.
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